Bidirectional ESD / Transient Suppressors

文件：111.77 Kbytes 页数：2 Pages

COMCHIP

典琦

Euro Strain Relief Bushings

文件：146.85 Kbytes 页数：1 Pages

Heyco

丝印：CEE；Package：SOD-123FL；TRANSIENT VOLTAGE SUPPRESSOR

文件：1.01244 Mbytes 页数：4 Pages

CHENDA

辰达半导体

丝印：CEE；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor Power 200W

文件：1.25369 Mbytes 页数：4 Pages

JUXING

广东钜兴电子

丝印：CEE；Package：SOD-123FL；Surface mount transient voltage suppressor power 200 watts

文件：495.59 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：CEE；Package：SOD123FL；Surface mount transient voltage suppressor power 200 watts

文件：438.38 Kbytes 页数：4 Pages

YFWDIODE

佑风微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1.3A, RDS(ON) = 8.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126 package. Lead-free plating ; RoHS compliant.

文件：721.46 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-126 package.

文件：461.29 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-126 package.

文件：462.09 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 2.0A, RDS(ON) = 5.0W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126 package. Lead-free plating ; RoHS compliant.

文件：723.02 Kbytes 页数：4 Pages

CET-MOS

华瑞