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CED830G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■500V,4.5A,RDS(ON)=1.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED830G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 500V,4.5A,RDS(ON)=1.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEF830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEF830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEM830

8USB2.0ports

AXIOMTEKAxiomtek Co., Ltd.

艾讯科技艾讯股份有限公司

CEP830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU830A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,4.1A,RDS(ON)=1.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■500V,4.5A,RDS(ON)=1.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU830G

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

详细参数

  • 型号:

    CED830G

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
CET/華瑞
23+
TO-251
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SR
23+
TO-251
7000
原装正品,假一罚十
询价
CET
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
CET/華瑞
23+
TO-251
50000
全新原装正品现货,支持订货
询价
C
TO-251
22+
6000
十年配单,只做原装
询价
C
23+
TO-251
6000
原装正品,支持实单
询价
CET/華瑞
24+
NA/
4340
原装现货,当天可交货,原型号开票
询价
CET
23+
TO-251
7300
专注配单,只做原装进口现货
询价
CET/華瑞
20+
TO-251
1090
现货很近!原厂很远!只做原装
询价
CET
25+
TO-251
1090
原装正品,假一罚十!
询价
更多CED830G供应商 更新时间2025-7-13 11:10:00