P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -16A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：358.8 Kbytes 页数：4 Pages

CET

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P Channel MOSFET

CET

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -16A, RDS(ON) = 86mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 125mW @VGS = -4.5V. RoHS compliant.

文件：428.04 Kbytes 页数：5 Pages

CET-MOS

华瑞

Amplifier Transistors

Amplifier Transistors Voltage and current are negative for PNP transistors

文件：246.1 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

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ONSEMI

安森美半导体

Amplifier Transistors

文件：79.14 Kbytes 页数：8 Pages

ONSEMI

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