P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -16A, RDS(ON) = 86mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 125mW @VGS = -4.5V. RoHS compliant.

文件：428.04 Kbytes 页数：5 Pages

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文件：79.14 Kbytes 页数：8 Pages

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