P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：870.14 Kbytes 页数：4 Pages

CET

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -93A, RDS(ON) =8.4mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：406.33 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：870.14 Kbytes 页数：4 Pages

CET

华瑞

40V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-20A

文件：381.02 Kbytes 页数：6 Pages

PANJIT

強茂