N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 93A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 7.4mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：421.09 Kbytes 页数：4 Pages

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华瑞

N Channel MOSFET

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：100.44 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 100A, RDS(ON) = 5.3mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 8.0mW @VGS = 4.5V. Lead free product is acquired.

文件：651.05 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 102A, RDS(ON) = 4.5 mΩ @VGS = 10V. RDS(ON) = 7.0 mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■

文件：401.69 Kbytes 页数：4 Pages

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华瑞