P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -74A, RDS(ON) = 7.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 11mW @VGS = -4.5V. RoHS compliant.

文件：536.08 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -89A, RDS(ON) = 7.1mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 11mW @VGS = -4.5V.

文件：444.18 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -74A, RDS(ON) = 7.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 11mW @VGS = -4.5V. RoHS compliant.

文件：536.08 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Power MOSFET

Description The G90P04F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：704.87 Kbytes 页数：6 Pages

GOFORD

谷峰半导体