N-Channel Enhancement Mode Field Effect Transistor

FEATURES 400V, 9A, RDS(ON) = 0.55W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：641.89 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：421.92 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. ■ Lead free product is acquired.

文件：496.23 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：87.41 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

文件：640.41 Kbytes 页数：4 Pages

CET-MOS

华瑞