CEDF630说明书PDF资料原装现货华瑞CET-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEDF630	文件：502.77 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ● 200V , 9A , RDS(ON)=400mΩ @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package. 文件：502.77 Kbytes 页数：5 Pages	CET 华瑞	CET
CEDF630	文件：300 bytes Page：1 Pages	N-Channel Enhancement Mode Field Effect Transistor	CET 华瑞	CET
CEF630N	文件：375.05 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. 文件：375.05 Kbytes 页数：4 Pages	CET 华瑞	CET
CEF630N	文件：596.04 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 文件：596.04 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEFF630	文件：490.22 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. 文件：490.22 Kbytes 页数：5 Pages	CET 华瑞	CET

更多CEDF630供应商更新时间2026-1-17 14:08:00