CED20N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,20A,RDS(ON)=55mΩ@VGS=10V. RDS(ON)=75mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED20N06

N-Channel Enhancement Mode Field Effect Transistor

CEP20N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEU20N06

N-ChannelEnhancementModeFieldEffectTransistor

CEU20N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,20A,RDS(ON)=55mΩ@VGS=10V. RDS(ON)=75mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU20N06

N-Channel60-V(D-S)MOSFET

CHM20N06PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT20Ampere FEATURE ​​​​​​​*Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CJU20N06

N-ChannelPowerMOSFET

CJU20N06

N-ChannelMOSFETusesadvancedtrenchtechnology

CMD20N06L

N-Channel60-V(D-S)MOSFET