P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -18A, RDS(ON) = 45mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

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华瑞

P Channel MOSFET

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华瑞

P-Channel Enhancement Mode Field Effect Transistor

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华瑞

OVERVOLTAGE SENSING CIRCUIT

This overvoltage protection circuit (OVP) protects sensitive electronic circuitry from overvoltage transients or regulator failures when used in conjunction with an external “crowbar” SCR. The device senses the overvoltage condition and quickly “crowbars” or short circuits the supply, forcing the

文件：130.91 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

OVERVOLTAGE SENSING CIRCUIT

This overvoltage protection circuit (OVP) protects sensitive electronic circuitry from overvoltage transients or regulator failures when used in conjunction with an external “crowbar” SCR. The device senses the overvoltage condition and quickly “crowbars” or short circuits the supply, forcing the

文件：130.91 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

.025 NPN Phototransistors

PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor in a 3 mm diameter, lensed plastic package. The package material transmits infrared and blocks visible light. These devices are spectrally and mechanically matched to the VTE33xxLA series of IREDs.

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PERKINELMER