P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -18A, RDS(ON) = 45mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：258.13 Kbytes 页数：4 Pages

CET

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：400.03 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：400.03 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -18A, RDS(ON) = 45mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：258.13 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Silicon MOSFET General-Purpose Switching Device

Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.

文件：38.95 Kbytes 页数：4 Pages

SANYO

三洋