MTD20N06HDL

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

MTD20N06HDL

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

MTD20N06HDLT4

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

MTD20N06HDLT4G

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

MTD20N06HDLT4G

N-Channel 6 0-V (D-S) MOSFET

20N06

N-Channel60-V(D-S)MOSFET

20N06

FastSwitching

20N06

20Amps,60VoltsN-CHANNELMOSFET

20N06

60VN-ChannelEnhancementModePowerMOSFET

Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

20N06B

20Amps,60VoltsN-CHANNELMOSFET

20N06F

20Amps,60VoltsN-CHANNELMOSFET

20N06H

20Amps,60VoltsN-CHANNELMOSFET

20N06HD

N-Channel60-V(D-S)MOSFET

20N06HLD

N-Channel60-V(D-S)MOSFET

20N06L

N-Channel60-V(D-S)MOSFET

CEB20N06

N-ChannelEnhancementModeFieldEffectTransistor

CEB20N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CED20N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,20A,RDS(ON)=55mΩ@VGS=10V. RDS(ON)=75mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED20N06

N-ChannelEnhancementModeFieldEffectTransistor

CEP20N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.