MTD20N06HDL

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

MTD20N06HDL

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

MTD20N06HDLT4

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

MTD20N06HDLT4G

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

MTD20N06HDLT4G

N-Channel 6 0-V (D-S) MOSFET

MTD20N06V

N?묬hannelDPAK

MTD20N06V

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSV™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50

MTP20N06

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSVPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Ju

MTP20N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP20N06V

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSVPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Ju