Power Field Effect Transistors

Power Field Effect Transistors N-Channel Enhancement Mode Silicon Gate DPAK for Surface Mount or Insertion Mount

文件：172.65 Kbytes 页数：5 Pages

Motorola

摩托罗拉

TMOS POWER FETs 5 AMPERES RDS(ON) = 0.4 OHM 50 and 60 VOLTS

Power Field Effect Transistors\nN-Channel Enhancement Mode Silicon Gate\nDPAK for Surface Mount or Insertion Mount

恩XP

恩智浦

Power Field Effect Transistors

Power Field Effect Transistors N-Channel Enhancement Mode Silicon Gate DPAK for Surface Mount or Insertion Mount

文件：172.65 Kbytes 页数：5 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

文件：345.02 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

文件：359.2 Kbytes 页数：2 Pages

ISC

无锡固电

Power Field Effect Transistors

恩XP

恩智浦