MTD5N06资料datasheet下载库存现货摩托罗拉-114ic电子网

首页 >MTD5N06>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
MTD5N06	文件：172.65 Kbytes Page：5 Pages	Power Field Effect Transistors Power Field Effect Transistors N-Channel Enhancement Mode Silicon Gate DPAK for Surface Mount or Insertion Mount 文件：172.65 Kbytes 页数：5 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MTD5N06-1	文件：172.65 Kbytes Page：5 Pages	Power Field Effect Transistors Power Field Effect Transistors N-Channel Enhancement Mode Silicon Gate DPAK for Surface Mount or Insertion Mount 文件：172.65 Kbytes 页数：5 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MTD5N06D	文件：345.24 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po 文件：345.24 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
MTD5N06I	文件：359.43 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po 文件：359.43 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多MTD5N06供应商更新时间2026-10-27 14:01:00