CED6030L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,40A,RDS(ON)=15.5mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEP6030AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,52A,RDS(ON)=11mΩ(typ)@VGS=10V. RDS(ON)=16mΩ(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CEP6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package

CEU6030L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=15.5mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CHM6030LPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT40Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CK6030

MAGNETICPOWDERCORES

CKRA6030

CrydomsCKRSeries

CKRSeries CrydomsCKRSeriesSolidStateRelaysweredevelopedtooffertheadvantagesofsemiconductorswitchingtechnologyinastandard22.5mmindustrialpackage.Quickandeasyinstallationiscoupledwithlowdrivepowerrequirementsandefficient,reliablepowerSCRoutput.BoxClamptermi

CKRA6030

DINRailMount

CKRA6030

THEGLOBALEXPERTINSOLIDSTATERELAYTECHNOLOGY

DPASeries •16PinDIPSSR •Ratingsto1A@280VAC •SCRoutput •Voltageorcurrent-controlinput •Zero-crossing(resistiveloads)output

CKRA6030

DINrailmount