N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 40A, RDS(ON) = 15.5mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：83.21 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

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华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 52A, RDS(ON) = 11mΩ (typ) @VGS = 10V. RDS(ON) = 16mΩ (typ) @VGS = 5V. ■ Extra low gate charge. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：516.69 Kbytes 页数：5 Pages

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华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 52A, RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20mΩ @VGS=4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package

文件：516.77 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 40A, RDS(ON) = 15.5mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：83.21 Kbytes 页数：4 Pages

CET

华瑞