N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 75A , RDS(ON) = 6.6mW @VGS = 10V. RDS(ON) = 9.5mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：397.84 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 75A , RDS(ON) = 6.6mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 9.5mW @VGS = 4.5V. Lead free product is acquired.

文件：617.19 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS

ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperatur

文件：103.97 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS

ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temper

文件：99.3 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS

ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperatur

文件：103.97 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉