N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 22A, RDS(ON) = 80mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 90mW @VGS = 7V. RoHS compliant.

文件：623.33 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 22A, RDS(ON) = 80mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 90mW @VGS = 7V. RoHS compliant.

文件：623.33 Kbytes 页数：4 Pages

CET-MOS

华瑞

3W, Mono, Ultra-Low EMI, Filterless, Class-D Audio Power Amplifier with Spread Spectrum

General Description The CP2215 is a high efficiency, mono, filterless, Class D audio power amplifier with spread spectrum designed for demanding audio applications. An advanced spread spectrum modulation reduces EMI and eliminates output filter. It is capable of delivering 3W of continuous av

文件：192.76 Kbytes 页数：3 Pages

CHIPHOMER

启攀微电子

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • 100mΩ @VGS = 4.5V, ID = 2.5A • 140mΩ @VGS = 2.5V, ID = 1.5A • 215mΩ @VGS = 1.8V, ID = 0.1A • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate to 2kV HBM • Totally Lead-Free

文件：174.69 Kbytes 页数：4 Pages

DIODES

美台半导体