CED61A2资料datasheet下载供应商报价华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CED61A2	文件：290.85 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：290.85 Kbytes 页数：4 Pages	CET 华瑞	CET
CED61A2	文件：300 bytes Page：1 Pages	N-Channel Enhancement Mode Field Effect Transistor	CET 华瑞	CET
CEP61A2	文件：102.11 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 57A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：102.11 Kbytes 页数：4 Pages	CET 华瑞	CET
CEU61A2	文件：290.85 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：290.85 Kbytes 页数：4 Pages	CET 华瑞	CET

更多CED61A2供应商更新时间2025-10-4 11:01:00