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CED40N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件:423.21 Kbytes 页数:4 Pages

CET

华瑞

CED40N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 37A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件:608.59 Kbytes 页数:4 Pages

CET-MOS

华瑞

CED40N10

N Channel MOSFET

CET

华瑞

CEU40N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件:423.21 Kbytes 页数:4 Pages

CET

华瑞

CEU40N10

N-Channel MOSFET uses advanced SGT technology

文件:988.95 Kbytes 页数:4 Pages

DOINGTER

杜因特

CEU40N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 37A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件:608.59 Kbytes 页数:4 Pages

CET-MOS

华瑞

技术参数

  • BVDSS(V):

    100

  • Rds(on)mΩ@10V:

    32

  • ID(A):

    37

  • Qg(nC)@10V(typ):

    50.8

  • RθJC(℃/W):

    1.6

  • Pd(W):

    93.8

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
CET
25+
TO-251
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
C
TO-252
22+
6000
十年配单,只做原装
询价
CET/華瑞
25+
251
8880
原装认准芯泽盛世!
询价
C
23+
TO-252
6000
原装正品,支持实单
询价
CET/華瑞
23+
TO-251
6302
询价
CET/华瑞
TO-251
6031
一级代理 原装正品假一罚十价格优势长期供货
询价
CET/華瑞
24+
NA/
6302
优势代理渠道,原装正品,可全系列订货开增值税票
询价
CET
23+
TO-251
7300
专注配单,只做原装进口现货
询价
CET/华瑞
23+24
TO-251
16790
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
询价
CET/華瑞
25+
251
860000
明嘉莱只做原装正品现货
询价
更多CED40N10供应商 更新时间2025-9-30 15:49:00