P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：422.09 Kbytes 页数：4 Pages

CET

华瑞

P-Channel MOSFET uses advanced trench technology

文件：1.14261 Mbytes 页数：4 Pages

DOINGTER

杜因特

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -7.5A, RDS(ON) = 28mW @VGS = -10V. RDS(ON) = 38mW @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：416.92 Kbytes 页数：4 Pages

CET

华瑞

P-Channel MOSFET uses advanced trench technology

文件：1.42829 Mbytes 页数：4 Pages

DOINGTER

杜因特

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -7.5A, RDS(ON) = 28mW @VGS = -10V. RDS(ON) = 38mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：603.87 Kbytes 页数：4 Pages

CET-MOS

华瑞