CEM4201

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V,-7.5A,RDS(ON)=28mW@VGS=-10V. RDS(ON)=38mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM4201

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-7.5A,RDS(ON)=28mW@VGS=-10V. RDS(ON)=38mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CEM4201

P-Channel MOSFET uses advanced trench technology

CEU4201

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-28A,RDS(ON)=26mΩ@VGS=-10V. RDS(ON)=36mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CS4201

CrystalClearAudioCodec97withheadphoneAmplifier

Description TheCS4201isanAC’972.1compliantstereoaudiocodecdesignedforPCmultimediasystems.ItusesindustryleadingCrystalClear®delta-sigmaandmixedsignaltechnology.ThisadvancedtechnologyandthesefeaturesaredesignedtohelpenablethedesignofPC99andPC2001complian

CS4201

AudioCodec??7withHeadphoneAmplifier

CS4201

CrystalClear짰AudioCodec??7forPortableComputing

D4201N

RectifierDiode

RectifierDiode

D4201N

Fullblockingcapability50/60Hzoverawidetemperaturerange

KeyParameters   VRRM2200V   IFAVM4240A(TC=100°C)   IFSM3570A(T88000AC=55°C)   VT00,668V   rT0,083mΩ   RthJC8,5K/kW   ClampingForce36…52kN   Max.Diameter121mm   ContactDiameter86mm   Height35mm Features •Fullblockingcapability50/60Hzoveraw

DS4201

USBAudioDAC