零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
CED6060R | N-Channel Logic Level Enhancement Mode Field Effect Transistor | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | |
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,50A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,52.4A,RDS(ON)=21mW@VGS=10V. RDS(ON)=25mW@VGS=5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●60V,60A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,42A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,42A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor
| CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,48A,RDS(ON)=24mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=29mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS |
详细参数
- 型号:
CED6060R
- 制造商:
CET
- 制造商全称:
Chino-Excel Technology
- 功能描述:
N-Channel Logic Level Enhancement Mode Field Effect Transistor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SR |
23+ |
TO-251 |
5000 |
原装正品,假一罚十 |
询价 | ||
CET |
1822+ |
TO-251 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
CET |
18+ |
TO-251 |
41200 |
原装正品,现货特价 |
询价 | ||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
台产 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
C |
22+ |
TO-251 |
6000 |
十年配单,只做原装 |
询价 | ||
C |
23+ |
TO-251 |
6000 |
原装正品,支持实单 |
询价 | ||
CET |
23+ |
TO-251 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
CET |
23+ |
TO-251 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
台湾产 |
25+ |
TO-251 |
9240 |
原装正品,假一罚十! |
询价 |
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