N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：423.21 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 37A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：608.59 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 200V, 40A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant

文件：531.53 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 10.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V.

文件：411.69 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -31A, RDS(ON) = 18.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 25mW @VGS = -4.5V. RoHS compliant.

文件：516.72 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 36A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：186.13 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：422.09 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 24A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：389.75 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 24A, RDS(ON) = 28mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 42mW @VGS = 4.5V. Lead free product is acquired.

文件：609.74 Kbytes 页数：4 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 46mW @VGS = 4.5V. Lead free product is acquired. -40V , -9A , RDS(ON) = 72mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4.

文件：800.6 Kbytes 页数：7 Pages

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