CED4112A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,47A,RDS(ON)=10.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=13mW@VGS=4.5V.

CEU4112A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 40V,47A,RDS(ON)=10.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=13mW@VGS=4.5V.

CEZC4112A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 40V,40A,RDS(ON)=10.2mW@VGS=10V. RDS(ON)=16mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CLL4112

LOWNOISEZENERDIODE6.8VOLTSTHRU47VOLTS500mW,5TOLERANCE

DESCRIPTION: TheCENTRALSEMICONDUCTORCLL4099SeriestypesarehighqualitySiliconZenerDiodesdesignedforlowleakage,lowcurrentandlownoiseapplications.

CLL4112

SURFACEMOUNTLOWNOISESILICONZENERDIODES6.8VOLTSTHRU47VOLTS500mW,5TOLERANCE

CMHZ4112

LOWNOISEZENERDIODE6.8VOLTSTHRU47VOLTS500mW,5TOLERANCE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMHZ4099SeriestypesarehighqualitySiliconZenerDiodesdesignedforlowleakage,lowcurrentandlownoiseapplications.

CMHZ4112

SURFACEMOUNTLOWNOISESILICONZENERDIODE6.8VOLTSTHRU47VOLTS500mW

CMHZ4112

SURFACEMOUNTLOWNOISESILICONZENERDIODE

CMPZ4112

SURFACEMOUNTLOWNOISESILICONZENERDIODE6.8VOLTSTHRU43VOLTS350mW

CMPZ4112

LOWNOISEZENERDIODE6.8VOLTSTHRU43VOLTS350mW,5TOLERANCE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPZ4099Seriestypesarehighqualitysiliconzenerdiodesdesignedforlowleakage,lowcurrentandlownoiseapplications. NOTE:Forlowervoltagedevices,seeCMPZ4614Series.