N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 10.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V.

文件：411.69 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 10.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V.

文件：411.69 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 40A, RDS(ON) = 10.2 mW @VGS = 10V. RDS(ON) = 16 mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：744.59 Kbytes 页数：6 Pages

CET-MOS

华瑞

LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low noise applications.

文件：109.37 Kbytes 页数：2 Pages

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