N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 10.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V.

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CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

文件：180.78 Kbytes 页数：13 Pages

PANASONIC

松下

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

文件：33.56 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ​​​​​​​ Features ● Two elements incorporated into one package.(Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

文件：33 Kbytes 页数：2 Pages

PANASONIC

松下