N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：117.33 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 16A, RDS(ON) = 75mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 90mW @VGS = 5V. Lead free product is acquired.

文件：471.04 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：403.11 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞