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型号	下载订购	功能描述	制造商上传企业	LOGO
CED3070	文件：667.26 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：667.26 Kbytes 页数：4 Pages	CET 华瑞	CET
CEP3070	文件：784.4 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 72A ,RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：784.4 Kbytes 页数：4 Pages	CET 华瑞	CET
CEU3070	文件：667.26 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：667.26 Kbytes 页数：4 Pages	CET 华瑞	CET
CXA3070	文件：1.41647 Mbytes Page：14 Pages	LED array expands Crees family of high flux, multi die integrated arrays 文件：1.41647 Mbytes 页数：14 Pages	Cree 科锐	Cree

更多CED3070供应商更新时间2025-12-10 15:36:00