N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 72A ,RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：784.4 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：667.26 Kbytes 页数：4 Pages

CET

华瑞

LED array expands Crees family of high flux, multi die integrated arrays

文件：1.41647 Mbytes 页数：14 Pages

Cree

科锐

XLamp LED

文件：2.67663 Mbytes 页数：13 Pages

Cree

科锐