N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 17A, RDS(ON) = 85mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

文件：507.03 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 17A, RDS(ON) = 85mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：624.05 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 17A,RDS(ON) = 75mW @VGS = 10V. RDS(ON) = 90mW @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：631.1 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 17A, RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

文件：508.15 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES • 60 V, 15 A, RDS(ON) = 85mΩ @VGS = 10 V. • Super high dense cell design for extremely low RDS(ON) • High power and current handling capability. • TO-220 & TO-263 package.

文件：524.79 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

文件：405.41 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

文件：87.08 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

文件：406.85 Kbytes 页数：4 Pages

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N Channel MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES\n■ 60V, 15A, RDS(ON) = 80mΩ @VGS = 10V.\n                 RDS(ON) = 80mΩ @VGS = 5.0V.\n■ Super high dense cell design for extremely low RDS(ON).\n■ High power and current handing capability.\n■ TO-220 & TO-263 package. ■ 60V, 15A, RDS(ON) = 80mΩ @VGS = 10V.\n                 RDS(ON) = 80mΩ @VGS = 5.0V.\n■ Super high dense cell design for extremely low RDS(ON).\n■ High power and current handing capability.\n■ TO-220 & TO-263 package.\n ;

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