P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -92A, RDS(ON) =6.0mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) =9.0mW @VGS = -4.5V. RoHS compliant.

文件：643.31 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V, 3.4A, RDS(ON) = 2.9 W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

文件：661.65 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V, 6.8A, RDS(ON) = 0.72W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：428.37 Kbytes 页数：5 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 8A, RDS(ON) = 0.42W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：519.97 Kbytes 页数：5 Pages

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华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -7A, RDS(ON) = 270mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：547.91 Kbytes 页数：5 Pages

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华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -200V, -10.5A, RDS(ON) = 0.36W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. Comparable to AEC-Q101.

文件：679.92 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 62A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V.

文件：739.1 Kbytes 页数：5 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 53A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：500.61 Kbytes 页数：5 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 11A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：873.64 Kbytes 页数：4 Pages

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华瑞

N-Channel 100 V (D-S) MOSFET

FEATURES • DT-TrenchPower MOSFET • 175 °C Junction Temperature • 100 Rg Tested APPLICATIONS • Primary Side Switch

文件：978.88 Kbytes 页数：7 Pages

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微碧半导体