N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V, 2.5A, RDS(ON) = 4.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：643.57 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 3.4A, RDS(ON) = 2.4W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：647.91 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 3.2A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

文件：472.74 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJ max, 3.1A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：479.27 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V, 3.5A, RDS(ON) = 3.3W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：613.64 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 700V, 3.5A, RDS(ON) = 3.3Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：399.75 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 4A, RDS(ON) = 2.4Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

文件：399.7 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 4A, RDS(ON) = 2.4W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

文件：613.21 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -15A, RDS(ON) = 70mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 120mW @VGS = -4.5V. Lead free product is acquired.

文件：893.71 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -15A, RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：370.89 Kbytes 页数：4 Pages

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