N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V, 2.5A, RDS(ON) = 4.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：643.57 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

文件：444.05 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP03N8 800V 4.8Ω 3A 10V CEF03N8 800V 4.8Ω 3A 10V CEB03N8 800V 4.8Ω 3A 10V ​​​​​​​ ■ Super high dense cell design for extremely low RDS(ON). ■ High power and curre

文件：401.43 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

文件：444.05 Kbytes 页数：4 Pages

CET-MOS

华瑞