Complementary Enhancement Mode Field Effect Transistor

General Description The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO

文件：270.32 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：4600；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

文件：1.46992 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4600；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

文件：2.41715 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO

文件：270.32 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4601 is Pb-free (meets ROHS & Sony

文件：306.74 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4601 is Pb-free (meets ROHS & Sony

文件：306.74 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

文件：144.64 Kbytes 页数：7 Pages

ATMEL

爱特梅尔

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

文件：144.64 Kbytes 页数：7 Pages

ATMEL

爱特梅尔

丝印：4604；Package：SO-8；Complementary Enhancement Mode Field Effect Transistor

General Description The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS(ON)and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications AO4604 and AO4604L are electrically identical. ​​​​​​​ -RoHS Compliant -AO4604L is Halogen Fre

文件：825.16 Kbytes 页数：9 Pages

AOSMD

万国半导体

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.23281 Mbytes 页数：14 Pages

VBSEMI

微碧半导体