Complementary Enhancement Mode Field Effect Transistor

General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n channel FET to minimize body diode losses. AO4607 is Pb-

文件：198.87 Kbytes 页数：8 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n channel FET to minimize body diode losses. AO4607 is Pb-

文件：198.87 Kbytes 页数：8 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4609 is Pb-free (meets ROHS & Sony

文件：656.25 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：4609；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

文件：1.76277 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4609；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

文件：2.41207 Mbytes 页数：7 Pages

KEXIN

科信电子

N- and P-Channel 30 V (D-S) MOSFET

文件：1.23199 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

丝印：4604；Package：SO-8；Complementary Enhancement Mode Field Effect Transistor

文件：343.96 Kbytes 页数：9 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

文件：343.96 Kbytes 页数：9 Pages

AOSMD

万国半导体

30V Complementary MOSFET

文件：551.43 Kbytes 页数：9 Pages

AOSMD

万国半导体

30V Complementary MOSFET

文件：551.43 Kbytes 页数：9 Pages

AOSMD

万国半导体