N- and P-Channel 30 V (D-S) MOSFET

文件：1.23199 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AON4602 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4602 is Pb-free (meets ROHS & Sony 259 specifications).

文件：156.73 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AON4602 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4602 is Pb-free (meets ROHS & Sony 259 specifications).

文件：156.73 Kbytes 页数：7 Pages

AOSMD

万国半导体

QL (AZ4) Micro Limit Switch

FEATURES 1. Subminiature design The size of the actual unit is approximately 1/10 in the case of the plunger model and approximately 1/6.5 in the case of the arm model, that of the vertical type limit switch. Large-scale miniaturization has been achieved. Ideal for miniaturized machinery

文件：677.11 Kbytes 页数：21 Pages

Panasonic

松下