丝印：4600；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

文件：2.41715 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO

文件：270.32 Kbytes 页数：7 Pages

AOSMD

万国半导体

600 mA Low Dropout Voltage Regulators

文件：192.99 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

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OCXO Standard Package Low Aging AT-Cut and SC-Cut Crystal Options Fast Warm-up

Features Standard Package Low Aging AT-Cut and SC-Cut Crystal Options Fast Warm-up Typical Applications Base Stations Digital Switching Synthesizers Test Equipment

文件：146.19 Kbytes 页数：4 Pages

VECTRON