P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -6.1 A RDS(ON)

文件：359.14 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

Ultra Low Power Voltage Detector

文件：490.87 Kbytes 页数：12 Pages

AKM

旭化成微电子

Ultra Low Power Voltage Detector

文件：493.97 Kbytes 页数：12 Pages

HUAXINAN

华兴安

Ultra Low Power Voltage Detector

文件：363.88 Kbytes 页数：11 Pages

AKM

旭化成微电子