N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4406AL uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Features VDS(V) = 30V ID= 12A (VGS= 10V) RDS(ON)

文件：158.12 Kbytes 页数：6 Pages

AOSMD

万国半导体

场效应管(MOSFET)

ElecSuper

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■ Features ● VDS (V) = 30V ● ID = 11.5 A (VGS = 10V) ● RDS(ON)

文件：1.95471 Mbytes 页数：5 Pages

KEXIN

科信电子

N-Channel MOSFET uses advanced trench technology

文件：1.52603 Mbytes 页数：4 Pages

DOINGTER

杜因特

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文件：1.50263 Mbytes 页数：5 Pages

JIANGSU

长电科技