N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications). AO4418L is a Green Product order

文件：112.28 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：4418；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 11.5 A (VGS = 20V) ● RDS(ON)

文件：1.28242 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 R g Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.0065 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：158.63 Kbytes 页数：5 Pages

AOSMD

万国半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

丝印：4418；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 11.5 A (VGS = 20V) ● RDS(ON)

文件：1.47482 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications). AO4418L is a Green Product order

文件：112.28 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：158.63 Kbytes 页数：5 Pages

AOSMD

万国半导体