丝印：4418；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 11.5 A (VGS = 20V) ● RDS(ON)

文件：1.47482 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications). AO4418L is a Green Product order

文件：112.28 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：60.57 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：60.57 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子