P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -6.1 A RDS(ON)

文件：359.14 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：959.25 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-channel Enhancement Mode Power MOSFET

Features VDS= -30V, ID= -5.1A RDS(ON)

文件：1.50239 Mbytes 页数：5 Pages

Bychip

百域芯

P-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代