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AO4406A

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件:1.00685 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

AO4406A

30V N-Channel MOSFET

General Description The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS

文件:2.58093 Mbytes 页数:6 Pages

WHXPCB

万和兴电子

AO4406A

丝印:AO4406;Package:SOP-8;11N06C 30V N-Channel Enhancement Mode MOSFET

General Features VDS = 30V ID =12 A RDS(ON)

文件:1.51183 Mbytes 页数:5 Pages

UMW

友台半导体

AO4406A

丝印:AO4406;Package:SOP-8;30V N-Channel Enhancement Mode MOSFET

Description The AO4406A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =12 A RDS(ON)

文件:1.31775 Mbytes 页数:5 Pages

EVVOSEMI

翊欧

AO4406A

30V N-Channel MOSFET

General Description The AO4406A uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID(at VGS=10V) 13A RDS(ON)(at VGS=10V)

文件:333.74 Kbytes 页数:6 Pages

AOSMD

万国半导体

AO4406A

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 13 A (VGS = 10V) ● RDS(ON)

文件:1.75377 Mbytes 页数:5 Pages

KEXIN

科信电子

AO4406A-HF

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 13 A (VGS = 10V) ● RDS(ON)

文件:2.07382 Mbytes 页数:5 Pages

KEXIN

科信电子

AO4406AL

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4406AL uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Features VDS(V) = 30V ID= 12A (VGS= 10V) RDS(ON)

文件:158.12 Kbytes 页数:6 Pages

AOSMD

万国半导体

AO4406A

低压MOSFET (12V - 30V)

30V N-Channel MOSFET

AOS

美国万代

AO4406A

30V N MOSFET

JGSEMI

台湾金锆

技术参数

  • 漏源电压(Vdss):

    30V

  • 连续漏极电流(Id):

    13A

  • 功率(Pd):

    3.1W

  • 阈值电压(Vgs(th)@Id):

    1.5V@250uA

供应商型号品牌批号封装库存备注价格
AOS美国万代
24+
SOP-8
888000
AOS万代代理 优势供应美国万代全系列产品
询价
AOS/美国万代
20+
SO-8
56258
原装现货、工厂库存
询价
AO
25+
SOP-8
32000
AO全新特价AO4406A即刻询购立享优惠#长期有货
询价
AOS
24+25+
SOP8
15000
原厂原装终端客户免费申请样品
询价
AOS
16+
SOP8
9235
询价
AOS
20+
SOP8
9000
全新原装公司现货
询价
AOS/万代
24+
SOP
3000
只做原厂渠道 可追溯货源
询价
AOS
23+
SOP8
9000
正规渠道,只有原装!
询价
UMW 友台
23+
SOP-8
80000
原装正品,实单请联系
询价
AOS/万代
20+
SOP-8
120000
原装正品 可含税交易
询价
更多AO4406A供应商 更新时间2025-10-4 10:03:00