N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4412 uses advanced trench technology to provide excellent RDS(ON) and ultra low gate charge for use has a fast high side switch. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.Standard product

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AOSMD

万国半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching ▼ RoHS Compliant

文件：67.84 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching

文件：85.77 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

N-Channel Enhancement Mode MOSFET

Features • 30V/12A, RDS(ON) = 9mW (typ.) @ VGS = 10V RDS(ON) =12mW (typ.) @ VGS = 4.5V • Super High Dense Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery P

文件：189.38 Kbytes 页数：10 Pages

ANPEC

茂达电子