20V N-Channel MOSFET

General Description The AO4402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 30V ID = 12A RDS(ON)

文件：280.68 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 20 A (VGS = 4.5V) ● RDS(ON)

文件：1.51386 Mbytes 页数：5 Pages

KEXIN

科信电子

20V N-Channel MOSFET

General Description The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 20V ID (a

文件：2.55261 Mbytes 页数：6 Pages

WHXPCB

万和兴电子

丝印：4402；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Application + PWM Applications « Load Switch

文件：1.85665 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel Enhancement Mode Field Effect Transistor

文件：256.05 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MOSFET

MTW

美台微

场效应管

HXY MOSFET

华轩阳电子

P-Channel Enhancement Mode Power MOSFET

Techpublic

台舟电子

N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 20 A (VGS = 4.5V) ● RDS(ON)

文件：1.86544 Mbytes 页数：5 Pages

KEXIN

科信电子