N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

General Description The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. Features VDS (V) = 30V ID = 11.5A RDS(ON)

文件：290.44 Kbytes 页数：7 Pages

ALPHA

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4406/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4406 and AO4406L are electrically identical.

文件：103.73 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 11.5 A (VGS = 10V) ● RDS(ON)

文件：1.5287 Mbytes 页数：5 Pages

KEXIN

科信电子

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00691 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：AO4406；Package：SOP-8；11N06C 30V N-Channel Enhancement Mode MOSFET

General Features VDS = 30V ID =12 A RDS(ON)

文件：1.51183 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：AO4406；Package：SOP-8；30V N-Channel Enhancement Mode MOSFET

Description The AO4406A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =12 A RDS(ON)

文件：1.31775 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

MOS管

YINPENGWEI

银鹏威

MOSFET

MTW

美台微

N-Channel MOSFET

XW

芯微半导体

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00685 Mbytes 页数：9 Pages

VBSEMI

微碧半导体