30V N-Channel MOSFET

General Description The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS

文件：2.58093 Mbytes 页数：6 Pages

WHXPCB

万和兴电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 13 A (VGS = 10V) ● RDS(ON)

文件：1.75377 Mbytes 页数：5 Pages

KEXIN

科信电子

30V N-Channel MOSFET

General Description The AO4406A uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID(at VGS=10V) 13A RDS(ON)(at VGS=10V)

文件：333.74 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 13 A (VGS = 10V) ● RDS(ON)

文件：2.07382 Mbytes 页数：5 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4406AL uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Features VDS(V) = 30V ID= 12A (VGS= 10V) RDS(ON)

文件：158.12 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 11.5 A (VGS = 10V) ● RDS(ON)

文件：1.95471 Mbytes 页数：5 Pages

KEXIN

科信电子