丝印：AO4405；Package：SOP-8；P-Channel MOSFET

General Features VDS = -30V ID = -6 A RDS(ON)

文件：486.95 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：AO4405；Package：SOP-8；P-Channel MOSFET

General Description The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V ID = -6 A RDS(ON)

文件：1.07722 Mbytes 页数：8 Pages

EVVOSEMI

翊欧

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. AO4405L( Green Product ) is offered in a lead-free package. Features VDS (V) = -30V ID = -6.0A RDS(O

文件：114.16 Kbytes 页数：4 Pages

ALPHA

30V P-Channel MOSFET

General Description The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -30V ID (at VGS=-10V) -6A RDS(ON) (at VGS=-10V)

文件：604.76 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) = -30V ● ID = -6 A (VGS =-10V) ● RDS(ON)

文件：2.55462 Mbytes 页数：5 Pages

KEXIN

科信电子

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：1.69365 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

30V P-Channel MOSFET

General Description The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -30V ID (at VGS=-10V) -6A RDS(ON) (at VG

文件：2.8153 Mbytes 页数：6 Pages

WHXPCB

万和兴电子

P沟道MOSFET (8V - 60V)

30V P-Channel MOSFET

AOS

美国万代

P-Channel MOSFET

XW

芯微半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-6 A (VGS =-10V) ● RDS(ON)

文件：2.83549 Mbytes 页数：5 Pages

KEXIN

科信电子