N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4414A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sou

文件：110.55 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4414A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sou

文件：110.55 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4414A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sourc    VDS (V) = 30V\n   ID = 8.5A (VGS = 10V)\n   RDS(ON) < 26mΩ (VGS = 10V)\n   RDS(ON) < 40mΩ (VGS = 4.5V);

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

文件：113.04 Kbytes 页数：4 Pages

AOSMD

万国半导体

SLIDE SWITCHES (SMD)

文件：1.22567 Mbytes 页数：12 Pages

COPAL

尼得科

SLIDE SWITCHES (SMD)

文件：1.22567 Mbytes 页数：12 Pages

COPAL

尼得科