N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4412 uses advanced trench technology to provide excellent RDS(ON) and ultra low gate charge for use has a fast high side switch. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.Standard product

文件：143.13 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.0065 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4412 uses advanced trench technology to provide excellent RDS(ON) and ultra low gate charge for use has a fast high side switch. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.Standard product AO • VDS (V) = 30V\n• ID = 8.5A (VGS = 10V)\n• RDS(ON) < 26mΩ (VGS = 10V)\n• RDS(ON) < 34mΩ (VGS = 4.5V) ;

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4412 uses advanced trench technology to provide excellent RDS(ON) and ultra low gate charge for use has a fast high side switch. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.Standard product

文件：143.13 Kbytes 页数：4 Pages

AOSMD

万国半导体