N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package. Features VDS (V)

文件：122.56 Kbytes 页数：5 Pages

ALPHA

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package. Features VDS

文件：171.5 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 12 A (VGS = 10V) ● RDS(ON)

文件：1.59378 Mbytes 页数：5 Pages

KEXIN

科信电子

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00676 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=11A,RDS(ON)

文件：475.81 Kbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Power MOSFET

Features VDS= 20V, ID= 10 A RDS(ON)

文件：1.78135 Mbytes 页数：5 Pages

Bychip

百域芯

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 12 A (VGS = 10V) ● RDS(ON)

文件：1.59912 Mbytes 页数：5 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package. Features VDS (V)

文件：122.56 Kbytes 页数：5 Pages

ALPHA

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代